Abstract
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
Highlights
The possibility to integrate opto-electronic and photonic devices, based on III–V semiconductors, directly on Si-based integrated circuits (IC) is one of the major research issues of today microelectronics industry [1,2,3,4,5,6]
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates
The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature B350°C, resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits
Summary
The possibility to integrate opto-electronic and photonic devices, based on III–V semiconductors, directly on Si-based integrated circuits (IC) is one of the major research issues of today microelectronics industry [1,2,3,4,5,6]. Abstract We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature B350°C, resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
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