Abstract
We report results of a photoluminescence (PL) study of homoepitaxial N-polar GaN films grown by metal-organic chemical vapour deposition on vicinal (0 0 0 1 ̄ ) GaN single crystal substrates. Off-angles of 2° and 4° towards the [1 1 2 ̄ 0] direction as well as 4° in the [1 0 1 ̄ 0] direction were investigated. Along with a remarkable improvement of the epilayer morphology, a significant reduction of the unintentional/intrinsic donor concentration is achieved for all considered misorientations. As a consequence, PL spectra with narrow bound and free excitonic lines were observed. The misorientation of 4° towards the [1 1 2 ̄ 0] direction results in an N-polar epilayer of the best optical quality.
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