Abstract
The room temperature photoluminescence (PL) of InGaN-based multiple quantum well (MQW) structures was studied. The PL intensity was significantly dependent on the well width and depth. The maximum PL intensity from an MQW with In0.15Ga0.85N wells was produced for a 2nm well; the intensity decreased significantly for thinner and thicker ones. Also, the PL intensity increased exponentially with the energy band gap difference between well and barrier layers. A deep well was effective for the improvement of luminescence efficiency.
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