Year-end Sale % OFF 
Abstract
The room temperature photoluminescence (PL) of InGaN-based multiple quantum well (MQW) structures was studied. The PL intensity was significantly dependent on the well width and depth. The maximum PL intensity from an MQW with In0.15Ga0.85N wells was produced for a 2nm well; the intensity decreased significantly for thinner and thicker ones. Also, the PL intensity increased exponentially with the energy band gap difference between well and barrier layers. A deep well was effective for the improvement of luminescence efficiency.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
