Abstract
Low carrier concentrations of undoped p-type and Te-doped n-type GaSb epilayers have been grown on (100)-oriented Te-doped GaSb substrates by liquid-phase epitaxy with supersaturation and undersaturation techniques, respectively. The net carrier concentrations of undoped and Te-doped layers obtained by C-V measurement can be as low as NA −ND =8×1015 cm−3 and ND −NA =1016 cm−3 , respectively. These GaSb-grown layers were characterized by photoluminescence (PL) measurement. The native neutral acceptor transitions appear at 778.2 meV for undoped layers and 777.2 meV for Te-doped layers. The ionization energy for the Te donor in GaSb was determined to be 3.6 meV below the bottom of conduction band at 18 K. The relation between the energy gap of GaSb and temperature was obtained by PL measurement at various temperatures. The spin-orbit splitting of the valence band was measured to be 0.798 eV at room temperature.
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