Abstract
Photoluminescence (PL) spectroscopy measurements are carried out to determine the deep defect levels of Cu-rich CuInS2 thin films prepared by sulfurization using ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. Several PL emission peaks were detected at 1.07, 1.01, and 0.93 eV in Cu-rich CuInS2 thin films. These peaks are considered to be due to both donor–acceptor pair emission as well as transitions related to trap. On the basis of excitation power dependent and temperature dependent PL measurements, the defect levels are calculated. Copper interstitial (Cui) was determined to be the deep donor level, which is easier to create in samples prepared under Cu-rich conditions. A new trap level at 625 meV below the conduction band was found. Using these data and our previous study data, the intrinsic defects are easier to exist in what kind of CuInS2 thin films is analyzed, a complete defect levels diagram of CuInS2 thin films is also proposed.
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