Abstract
A low-energy photoluminescence (PL) emission is observed in GaxIn1−xAs heterostructures. The emission originates from an electron-hole plasma (EHP) confined in a 500 Å GayIn1−yAs layer between the InP substrate and a wider band gap GaxIn1−xAs layer. A line-shape analysis of the EHP emission yields electronic temperatures which essentially coincide with the bath temperature. Linear polarization of the PL was observed which indicates a degree of strain in the confining layer. Studies in a magnetic field indicate that the carrier transport in the heterostructure studied is via free carriers and not via excitons.
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