Abstract
Over-passivation films of silicon nitride (SiN) and silicon dioxide (SiO2) on (NH4)2Sx-treated GaAs deposited by various kinds of systems were studied with photoluminescence measurements. Among the various kinds of systems commonly used in semiconductor device fabrication processes, electron cyclotron resonance chemical vapor deposition (ECR-CVD) produces undamaged over-passivation films and it appears to be a promising system. The silicon nitride and silicon dioxide deposited at room temperature by ECR-CVD have the same PL intensity. For SiN, the effect of the treatment is enhanced by annealing while a gradual degradation with increasing temperature is observed for SiO2. By using ECR-CVD SiN for sulfur-treated GaAs passivation, the luminescences of free excitons and donor bound excitons are observed even for bulk-grown GaAs at 4.2 K, which indicates the reduction of the recombination centers at the surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
