Abstract
Photoluminescence (PL) properties of Si nanoparticles (Si-np) produced by irradiating the Si wafer with nanosecond laser pulses at 532, 683 and 1064 nm are studied. Si-np are found to be deposited in a doughnut shape around the irradiated spot. The irradiation wavelength is found to be the main cause for the particle size variation. Exposure of the freshly prepared Si-np to air for different periods of time leads to increased PL intensity reaching saturation after few days. The PL spectrum shows two well resolved peaks around 435 nm (2.85 eV) and 441 nm (2.81 eV) within an hour of exposure of the freshly prepared samples to air with broadening of the emission spectrum on further exposure to air. Possible mechanism of particle size variation and PL emission are discussed.
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