Abstract
We analyze Cu(In,Ga)Se2 absorbers with a scanning near-field optical microscope (SNOM) by photoluminescence (PL). Such measurements allow one to extract local fluctuations of the integral PL yield, the quasi-Fermi level splitting, and the material composition in the submicron range. However, the experimental findings depend strongly on the surface roughness of the absorber: If the surface is rough, artifact-prone correlations between surface contour and PL features measured by SNOM can be found that complicate the study of recombination effects. For smooth surfaces, such correlations no longer exist and the influence of grain boundaries on the integral PL yield and the quasi-Fermi level splitting is revealed. The method also allows a detailed determination of the local band gaps in neighboring grains and their spatial variation inside, and thus of possibly local changes in chemical composition of different grains.
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