Abstract
AbstractPhotoluminescence (PL) and optical gain properties of ZnO and MgZnO epitaxial layers were investigated under different excitation conditions in a wide temperature range. The high‐quality layers were grown by molecular beam epitaxy technique. CW laser radiation, nano‐ and pico‐second light pulses were used as photoexcitation source. Spontaneous, stimulated, time‐resolved and time‐integrated PL of ZnO‐based layers are analyzed. The PL of the layers under low excitation is caused by annihilation of free excitons in the near‐band‐edge region. Increase of excitation in ZnO leads to radiative recombination due to non‐elastic collisions of excitons with typical P ‐line in the spectrum. Under extremely high levels of pumping excitons undergo the Mott transition and broad electron‐hole band predominates in the PL spectrum. The latter mechanism is responsible for optical gain of ZnO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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