Abstract
Photoluminescence in CdS has been studied for as-grown, heat-treated and ion-implanted crystals. 1) In the as-grown crystals, the green emission intensity increases with the carrier density of CdS up to 5×1016 cm-3 where the intensity is maximum, and decreases with the dislocation density. 2) Heat treatment decreases green emission and produces red emission. The production of lattice defects due to heat treatment is suppressed by coating the sample with SiO2. film. 3) Green emission is decreased and red emission is enhanced by ion implantation. 4) The depth distribution of the defects which are introduced by heat treatment and ion bombardment can be explained by the vacancy diffusion mechanism. 5) The red band is considered to originate from an associated center of a cadmium vacancy and an impurity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
