Photoluminescence spectrum redshifting of porous silicon layers prepared from diamond scratched silicon samples

K.B Sundaram,S Albin,J Blanchard,A Lavarias,J Zheng

doi:10.1109/secon.1997.598687

Photoluminescence spectrum redshifting of porous silicon layers prepared from diamond scratched silicon samples

K.B Sundaram, S Albin + Show 3 more

https://doi.org/10.1109/secon.1997.598687

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Publication Date: Apr 12, 1997

Citations: 2

Affiliation: Old Dominion University, University of Central Florida

#Silicon Samples #P-type Silicon Samples + Show 8 more

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Abstract

Porous silicon samples were prepared by an electrochemical etching technique using various n-type and p-type silicon samples with different resistivities. Photoluminescence studies were performed on these porous silicon layers prepared from diamond scratched samples at room temperature. It is found that there is a redshift for these samples when compared to unscratched silicon samples.

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