Abstract
Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679eV with a very narrow linewidth of 17meV at excitation power density of 3.4W∕cm2. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by ∼45meV from 300to15K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3×1017cm−3 has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2×1017cm−3.
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