Abstract
The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect.
Highlights
DA - 201T9h/e09fo/0rm1 ation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence
Temperature dependences ofphotoluminescence spectra and Spectroslcoocpayl mechanical stress effects on the position andfull width at half-height of the 580-nm zero-phonon line optical SP - 59p7eak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect
New optical centers are continually sought ainntdentshietyirosfptehcetrHal19prcoepnetretriewsaasre studied for photonics applications despite the fact that several hundred optical centers are aslhroewadnytokninocwrenaisnedeixapmoonnednt[i5a]ll.y ainscrtehaesaenAdn.ebTaaelnimndgpweteriatmhtupareezraetruor-ephonon line (ZPL) at 580 nm (2.137 eV) and distinct vibronic structure on the phonon tail that wdeepreenndoet npcreevsioouf sly observed in diamond PL spectra were detected in PL spectra of natural diamond and those from chemical vpahpootorludmepinoesisticoennc(Ce VspDe)ctirmapalanndted with D-ions and vacuum annealed at 1000-1650°C [6]
Summary
DA - 201T9h/e09fo/0rm1 ation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence. The present work studied the conditions and formation mechanisms of HI9 centers (ZPL at 580 nm) in natural and CVD diamonds resulting from irradiation followed by high-temperature annealing.
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