Abstract
AbstractWe have investigated photoluminescence (PL) spectra of sparsely‐spaced InAs self‐assembled quantum dots (QDs) in a GaAs matrix, grown by molecular beam epitaxy. The dot density of samples measured in this study ranges from 2×107 to 7.6×105 cm‐2. From the dot density dependence of PL intensity of the QDs and the wetting layer (WL), we have obtained the carrier capture radius of individual QD in the plane of the WL and found it to be 540 nm at 11 K. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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