Abstract
Single crystal of La2Si2O7:Ce (LaPS:Ce) was successfully grown by floating zone method for the first time. The structure of as grown sample is confirmed to be monoclinic with space group P21/c by x-ray diffraction and energy dispersive spectra. Its photoluminescence (PL) and scintillation properties of LaPS:Ce crystal were characterized through vacuum ultra-violet excitation and emission spectra, PL decay curve, x-ray excitation luminescence spectrum, γ-ray multi-channel spectrum and afterglow spectrum. Emission peaks of this material are around 3.5 eV and 3.3 eV, corresponding to the typical transition 5d → 4f of Ce3+. The PL decay time of LaPS:Ce is 29.3 ns. The light yield of the sample is determined to be about 5400 ph MeV−1 with a low afterglow level. The trap states in LaPS:Ce are also studied through the thermally stimulated luminescence measurement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
