Abstract
The quenching dynamics of femtosecond-optical-pulse-induced photoluminescence in semiconductors under the influence of single-cycle terahertz pulses has been experimentally investigated. When electron kinetic energy gained from the terahertz field was comparable to or greater than initial excess electron energy, photoluminescence quenching was observed. Quenching in cadmium telluride (CdTe) and gallium arsenide (GaAs) is linearly proportional to the intensity of incident terahertz waves and reaches up to 17% and 4%, respectively, at a peak terahertz intensity of 13 MW/cm2. The photoluminescence measurement reveals that the ultrafast decay times of terahertz-pulse-induced quenching are 700±60 fs for CdTe and 350±30 fs for GaAs.
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