Abstract

A comprehensive study is reported of the epitaxial growth and photoluminescence properties of ZnS on GaAs and Si. Conventional and photoassisted MOMBE and CBE growth using H2S, DipS and t-BuSH, with DeZn showed higher growth rates in the presence of H, or under photoassisted conditions. At low temperatures, the radical alkyl by-products from the cracked precursors were identified as reducing the growth rate through surface site blocking. A CaF2 buffer layer was shown to improve the crystalline quality due to elimination of a reaction between S and Si. Low temperature photoluminescence studies identified recombinations from the ground and the first excited states of the free exciton as well as from neutral donor and acceptor bound excitons, and phonon replicas.

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