Abstract
We have investigated the photoluminescence (PL) properties of Zn1−xMgxSe epilayers grown on GaAs substrates with different misorientation angles by molecular beam epitaxy. According to the data measured by PL and by electron-probe microanalysis, the Mg incorporation in the Zn1−xMgxSe epilayer decreases with increasing misorientation angle. In addition, the PL spectra showed that the full width at half maxima of the band-edge excitonic emission and the intensity of the defect-related donor-acceptor emission in Zn1−xMgxSe epilayers decreased appreciably when a substrate with a misorientation angle of 15° was used.
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