Abstract
We have studied the photoluminescence band shape of the 1.36 eV (Z-band) and the 1.32 eV (Z′- band) PL bands in high purity low-temperature-grown n-type bulk polycrystalline CdTe as a function of the excitation power and temperature. Both bands have a nonsymmetrical shape with a gradual decrease on the high-energy side but the variation of the shape with temperature and excitation power is different for Z- and Z′-bands. Both bands have the same temperature quenching activation energy ET = 35 meV. On the basis of our investigations we assign the 1.32 eV emission to a free-to-bound recombination near dislocations and the 1.36 eV emission to a DA emission near the same dislocation. Both bands are related to a shallow acceptor EA = 35 meV (probably Li or Na), whose concentration in the bulk is quite low. The Z-band is also related to a deep donor (ED ≥ 200 meV), probably of intrinsic origin.
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