Abstract
Strong photoluminescence of Eu3+ due to intra 4f transitions are obtained from amorphous xerogel TiO2: Eu3+ films prepared by sol–gel method and treated at a low temperature of 100 °C. The films are deposited on four different substrates: Si, Al, AAO (anodic alumina oxide) and porous silicon. We find that the luminescence intensity on AAO substrate increased 4 times comparing with that of Si or Al, and luminescence intensity decreases obviously on porous silicon substrate. Energy transfer mechanism from TiO2 host to Eu3+ is deduced through analysis of photoluminescence and photoluminescence excitation spectrum. Concentration quenching of Eu3+ does not appear even at high atomic concentration of 7.69%.
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