Abstract
The effect of crystal quality in an Si-overlayer on photoluminescence properties of β-FeSi 2 was investigated for an Si-overlayer prepared on β-FeSi 2/Si by thermal CVD and plasma-enhanced CVD method. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 was observed from Si/β-FeSi 2/Si double heterostructure consisted of poor-crystalline Si-overlayer.
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