Abstract
We have investigated the structure and photoluminescence (PL) properties of Se nanocrystals (NCs) obtained by rapid thermal annealing of a-Se films on Si substrate. The size of Se NCs in a trigonal phase increases linearly with increasing temperature. Moreover, three PL peaks located at 1.4, 1.7 and 1.83 eV are observed, which are attributed to the emission of defects in amorphous Se, donor-acceprter pair (DAP) recombination at the interface of amorphous Se and Se NCs, and interband transition of Se crystals, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
