Abstract
Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be a device for future flat screen display and can be high in demand. Main purpose of this experiment is to determine the photoluminescence properties of porous silicon nanostructures (PSiNs). PSiNs samples were prepared using photo-electrochemical anodization. P-type silicon substrate was used for this experiment. For the formation of PSiNs, a fixed current density (J=20 mA/cm2) and 30 minutes etching time was applied for the variety of electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH, were used for samples 3:1, 2:1, 1:1, 1:2 and 3:1. The effective photoluminescence properties was observed for sample C.
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