Abstract
The photoluminescence (PL) properties of the II3V2 compound semiconductor Zn3As2, grown by metalorganic vapor phase epitaxy, is investigated in the temperature range of 4.2–350 K. Several lines are reported, believed to be due to acceptors and donor-acceptor complexes in the epitaxial material. From variable temperature PL, the band gap is deduced to be indirect in nature (in contrast to most experimental findings to date which have indicated the band gap to be direct in nature) and ∼25–30 meV larger than the indirect band gap. The direct band gap energy has been extracted from the PL spectra in the range of 110–350 K. A linear relationship is observed in this temperature range with slope dEg/dT=−4.00×10−4 eV/K. PL yielded a value of 1.005 eV for the direct gap at room temperature in good agreement with values between 0.989 and 0.999 eV obtained from transmission and reflection measurements.
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