Photoluminescence properties of Lu2Si2O7:Eu3+ sol-gel thin films obtained using GLYMO as a silicon source

Abstract

Thin films of Lu2Si2O7:Eu3+ were prepared via sol-gel methods and dip coating using lutetium nitrate and (3-Glycidyloxypropyl)trimethoxysilane as precursors, and ethanol and ethylene glycol were used as solvents. Acetylacetone was used as a stabilizer, and the pH was adjusted using acetic acid. Lu2Si2O7:Eu3+ films were deposited on silica quartz substrates and exhibited a monoclinic structure with preferential orientation along the [012] direction after heat treatment at 1000 °C. The film’ morphology was characterized by scanning electron microscopy, and the photoluminescence spectrum revealed a strong emission at 612 nm (5D0→7F2), corresponding to the Eu3+ ions, under 254 nm excitation. Notably, both the optical yield and decay time increased with increasing SiO2 content.