Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions

Abstract

It has been established that the photoluminescence spectra of heavily doped heterostructures based on AlxGa1 − xAs)1 − ySiy solid solutions exhibit quenching of the main exciton bands of AlxGa1 − xAs ternary solid solutions and appearance of other maxima. The quenching of the main exciton bands can be associated both with the DX-center formation and with the change in the character of the band structure of (AlxGa1 − xAs)1 − ySiy quaternary solid solutions.