Abstract
Photoluminescence (PL) properties of Ge-doped CuGaSe2 single crystals were studied in the temperature range between 8 and 300 K. The doping was done using the ion implantation technique. As-grown crystals exhibit two PL bands at 1.68 and 0.96 eV. The Ge doping gives rise to two additional deep PL bands at 1.28 and 0.73 eV. Based on the temperature quenching of these PL bands we show that the 1.68 and the 0.73 eV PL bands are probably both related to the VCu acceptor. We suppose that the (VCu–GeCu) complex where the Ge donor defect has a double charge is responsible for the 0.73 eV band. The 0.96 and 1.28 eV bands are explained as close donor–acceptor pairs where the acceptor defect is VGa. We assume that the single charged GeCu donor defect paired with the VGa is connected with the 1.28 eV PL band while an unknown intrinsic donor paired with the VGa is responsible for the 0.96 eV band.
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