Abstract
Eu3+-and Tb3+-doped YAlO3 phosphors are prepared by solid-state reaction method and their photoluminescence properties are investigated as functions of the Eu3+and Tb3+concentrations. The phosphors crystallize in the orthorhombic crystal structure. Under near-ultraviolet excitation (398nm), the emission spectra of Y1−xAlO3:xEu3+(0.02≤x≤0.1) phosphors show several strong peaks at 593, 616, 655, and 697nm, which are attributed to the 5D0→7FJ (J=1, 2, 3, and 4) transitions of Eu3+ions. A high value of (5D0→7F2)/(5D0→7F1) is obtained for the Y1−xAlO3:xEu3+phosphors, indicative of high-purity red emission. Furthermore, the emission peaks of Y1−yAlO3:yTb3+(0.04≤y≤0.2) phosphors are detected at 489, 544, 585, and 621nm, which are due to the 5D4→7F6, 5D4→7F5, 5D4→7F4, and 5D4→7F3 transitions of the Tb3+ions, respectively. The emission peak (544nm) corresponding to the 5D4→7F5 transition is the most intense, which is advantageous for high green color purity. White light can be obtained by combining blue GaN LED chips with the red Y1−xAlO3:xEu3+and green Y1−yAlO3:yTb3 phosphors prepared in this study.
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