Abstract
High-density, nanometer-scale InAs quantum wires are observed on InP (100) grown by molecular beam epitaxy. The detailed temperature-dependent photoluminescence (PL) properties are studied. The fast redshift of PL peak energy and the monotonic decrease of PL linewidth are observed and explained in terms of carrier relaxation effect, resulting from the efficient carrier transfer from smaller wires into nearby larger ones in coupled system. For the superlattice samples, the effect of spacer thickness on the PL properties was also investigated. Device applications of these quantum structures are very promising.
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