Abstract
Ternary polycrystalline Zn1xCdxO semiconductor films with cadmium content (x) ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn1xCdxO films decreases continuously as the Cd content x increases. Photoluminescence measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. Increasing the Cd content x also leads to the broadening of the emission peak. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn1xCdxO films potential candidate for optoelectronic device.
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