Abstract
We prepared hydrogen and oxygen alloys of a-Si by the method of rf sputtering and found similarities in their photoluminescence (PL) features. Depression of PL intensity at high temperature is reduced by alloying and results in a larger PL intensity at room temperature. Nonradiative recombination processes in the alloys are discussed in terms of the temperature dependence of the PL intensity. It is concluded that band gap fluctuations induced by alloying reduce transitions to nonradiative defect centers in these systems.
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