Abstract
A detailed study of the photoluminescence properties (5 K) of AlxGa1-xAs with an interpretation for both the direct and indirect bandgap regions is presented. Linear relationships for the excitonic and acceptor related peak energies as a function of composition in both regions are given. In the indirect region phonon replicas of the indirect exciton recombination are observed. The measured energies and strengths of these phonon replicas are presented and compared with data from the literature. In the indirect region a new transition at 1.951+or-0.001 eV has been measured, which has a peak energy that is independent of the Al content of the material. Its relative intensity increases strongly near the AlxGa1-xAs/GaAs interface. This transition originates from either an indirect excitonic transition in the GaAs underneath the AlxGa1-xAs or an interface effect.
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