Abstract
AlN homoepilayers and heteroepilayers were grown on polar c-plane and nonpolar a-plane and m-plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN homoepilayers (c, a and m planes) were strain free with an identical band gap of about 6.099 (6.035)eV at 10 (300)K, which is about 42meV below the band gap of c-plane AlN heteroepilayers grown on sapphire. Also, nonpolar a-plane homoepilayers have the highest emission intensity over all other types of epilayers. We believe that a-plane AlN homoepilayers have the potential to provide orders of magnitude improvement in the performance of new generation deep UV photonic devices.
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