Abstract
A series of red-emitting phosphors of Sc2(MoO4)3: x%Eu3+ have been successfully synthesized at 800°C by solid-state reaction. X-ray diffraction, scanning electron microscopy, photoluminescence spectra and decay curves were used to characterize the structures and luminescence properties. In the excitation spectrum, the strongest absorptions of 7F05L6and 7F05D2 match well with the emission wavelength of the near-ultraviolet InGaN and blue GaN chips. The CIE value of Sc2(MoO4)3: 40%Eu3+ sample reaches (0.665, 0.334), which is very close to the NTSC standard (0.67, 0.33), demonstrating the highly pure red lights emitted. The decay curves of Eu3+: 5D07F2 emission exhibit a bi-exponential function excited by a 266nm nanosecond-pulsed laser resulting from the lattice distortion which can speed up electric dipole transition. The good excitation profile and pure red emission indicate Sc2(MoO4)3: Eu3+ is a promising red-emitting phosphor for its application in commercial white light emitting diodes.
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