Abstract
The dependence of photoluminescence (PL) from a thin film transparent p-type semiconductor of CuBr1-xIx (x = 0.0–1.0) on the temperature and excitation intensity was investigated. The transmittance spectra showed that the band gap energy varied with x. All samples showed PL at around 2.9 eV, but the actual position showed a dependence on the band gap energy. This peak contained four components (P1–P4), of which P1 had the highest energy and P2 had the second highest energy. The origin of the P1 and P2 components were concluded to be exciton recombination and the transition between the Cu vacancy (VCu) level and the conduction band minimum, respectively. The exciton binding energy and VCu level were estimated from the temperature dependence of the PL. For all values of x, the estimated VCu level was ca. 50 meV.
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