Abstract
We use two simple analysis methods to determine quantum efficiency and relative carrier recombination rates in GaAs layers of microwave detector. By means of these methods, we evaluate internal quantum efficiency as a function of pump power and temperature. It does not have the highest value at low temperatures as usual, but increases with temperature and reaches nearly 99% at liquid nitrogen or room temperature depending on pump power.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have