Abstract
Titanium-doped zinc orthosilicate (α-Zn2SiO4:Ti) phosphor thin films were deposited on silicon wafer substrates by the sol–gel process. The crystallization processes and photoluminescence properties of the films were investigated. X-ray diffraction revealed that the dried films were amorphous and converted into single-phase willemite structure following annealed at 600 °C and above. Upon thermal annealing at 800 ° –1000 °C, Ti-doped willemite thin films had the average crystallite sizes of 17∼28 nm. The luminescence properties of phosphor films were characterized by excitation and emission spectra. Photoluminescence spectra of Ti-doped films exhibited prominent blue emission bands centered at 402 nm under an excitation wavelength of 225 nm. The emission intensity was dependent on the level of titanium doping, annealing temperature, and film thickness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
