Abstract
AbstractThe 1.54μm emission of erbium implanted SiGe alloys was investigated as a function of oxygen and germanium concentrations as well as defect densities. Samples of SiGe layers grown by atmospheric pressure chemical vapor deposition technique which contain high concentrations of grown-in oxygen in the 10 19 - 1020 cm−3 range and 2 - 24 % Ge were chosen for the experiments. By using rapid thermal annealing in nitrogen atmosphere, a high optical activation of Er was found by photoluminescence. In samples with low defect densities nearly one third of the implanted Er ion dose could be detected in form of electrically active donors by spreading resistance measurements. The behavior of different SiGe : Er layers, based on sample property and annealing condition, suggests that more than only one type of luminescent Er-complex is present.
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