Photoluminescence of recombination processes from two-dimensional electron states to three-dimensional hole states in narrow-gap semiconductor quantum wells.

Abstract

Recently electron quantum wells are created in the p-type narrow-gap semiconductors by Ar + ion bombardment. These structures are p-i-n-i-p type. Using the Kane model, we have calculated two-dimensional electron density of states, electron Fermi energy as a function of electron concentration in the quantum well, and photoluminescence transition energy from two-dimensional electron states to three-dimensional hole states. We compare the theoretical calculations to the experimental results in the absence and presence of a magnetic field