Abstract
Photoluminescence spectra are measured for GaAs grown by vapour phase epitaxy (VPE) under admixture of ammonia. At low temperatures a series of unusual luminescence lines is obserbed within the spectral interval ranging from 1.509 eV to 1.440 eV. For high ammonia flow rates these lines are the most dominant luminescence contributions. From highly resolved spectra at T = 2 K, time resolved experiments as well as from investigations in an applied magnetic field we conclude that the new luminescence can be attributed to the radiative decay of excitons bound to incorporated nitrogen.
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