Abstract
We performed low temperature photoluminescence studies on nanometric thickness silicon single quantum wells. We show that electron hole recombination spectra are strongly dependent on the well thickness t and that carriers are in a strong quantum confinement regime for t ⩽ 3 nm. A set of fixed lines is identified and attributed to discrete and confined ground state levels or activated trap levels. A significant increase in the quantum efficiency is observed in the confinement regime and is associated with the progressive transformation of the Si layer into a planar distribution of two dimensional “nanoplates”.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have