Abstract
Passivation of the n-InP(100) surface with an aqueous solution of sodium sulphide (Na2S) has been investigated by spectroscopic photoluminescence (PL). After sulphide treatment the PL signal intensity of InP increased significantly and this increase is dependent on duration of sulphide passivation. The correlation of the increase in the PL intensity after sulphide treatment with the variation of the solution pH in contact with InP(100) surface has been established, that expect the possibility for optimization of the passivation process by monitoring the change of the solution pH value in the course of sulphide treatment of the semiconductor.
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