Abstract
Photoluminescence measurements on Mn- and Un-doped liquid phase epitaxy Ga 0.47In 0.53As on InP have been made at the temperature range of 4.2–296 K. The Mn acceptor binding energy is estimated to be 45 ± 2 meV. Luminescence due to the Mn acceptor quenches at 60–100 K depending on the doping concentration of Mn in favor of a near-band edge emission.
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