Photoluminescence of manufactured 1-D crystalline Si gratings

Abstract

An innovative fabrication process for forming 1-D, nanoscale linewidth grating and wire structures in (100) Si is reported. Scanning electron microscope and Raman scattering measurements demonstrate crystalline structures with widths as small as ∼ 1.5 nm. For structures ≲ 10 nm, room temperature photoluminescence measurements (257 nm excitation) show spectral peaks ∼ 380–500 nm. In contrast to the Raman scattering rsults, which show a definite correlation with structure widths, the PL spectra are relatively invariant as structure widths are reduced below 10 nm.