Abstract
The photoluminescence (PL) of low-temperature-grown AlGaAs GaAs multiple quantum wells (LT-MQWs) has been investigated and compared with a normal-temperature-grown AlGaAs GaAs MQW structure (NT-MQWs) implanted with protons. The as-grown LT-MQWs show much more intensive PL than the as-implanted NT-MQWs. Upon anneal, the PL from the LT-MQWs and the NT-MQWs exhibits different behaviors. For the NT-MQWs, the PL intensity increases monotonously with rising annealing temperature due to the decrease of implantation-induced defects. By contrast, the PL from the LT-MQWs is drastically quenched, and the PL intensity drops nearly three orders of magnitude after anneal at 600°C. The annealing behavior of the PL from the LT-MQWs is attributed to the formation of As clusters that act as deep trap centers for the photoexcited carriers and cause the quenching of the PL intensity. After anneal, enhanced interface intermixing and roughening have been observed in the LT-MQWs.
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