Photoluminescence of low-energy ion bombarded silicon

Abstract

Using photoluminescence we have examined defects introduced into silicon by low-energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne+, Ar+, Kr+, and Xe+) in the 200–2000 eV ion energy range. The spectra indicate the presence of noble gas associated centers which appear to be identical to the defect which is responsible for the well-known I1 spectrum (or W), except for modifications due to the interaction with the noble gas atoms. The appearance of the modified I1 spectra at these low bombardment energies suggests a simple structure of the underlying defects.