Abstract
The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by La % O <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> by ion double implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to different ion implanting sequence of La and O <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and to the temperature of thermal annealing.
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