Abstract
The photoluminescence of inversion electrons with carbon acceptors in a modulation-doped Al${}_{x}$Ga${}_{1\ensuremath{-}x}$As-GaAs single heterostructure was studied for different temperatures and excitation intensities. Despite the essentially homogeneous distribution of residual acceptors in the GaAs buffer, well-resolved luminescence profiles are observed for the ground and first excited two-dimensional electron subbands. This is due to the fact that the inversion layer interface potential restricts the overlap of the electron and acceptor wave functions to limited spatial regions close to the Al${}_{x}$Ga${}_{1\ensuremath{-}x}$As-GaAs interface, where the transition energies are weakly dispersive. A simple model will be presented for the calculation of the luminescence line shape that allows a quantitative analysis of the experiment.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
